characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250 a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125 c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1.0ma) 050-5615 rev b maximum ratings all ratings: t c = 25 c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25 c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25 c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/ c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 500 20 0.28 25 250 100 24 apt5028bvr 500 2080 30 40 250 2 -55 to 150 300 2030 960 apt5028bvr 500v 20a 0.280 to-247 g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. usa 405 s.w. columbia street bend, oregon 97702-1035 phone: (541) 382-8028 fax: (541) 388-0364 europe avenue j.f. kennedy bat b4 parc cadra nord f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 apt website - http://www.advancedpower.com power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. ? faster switching ? 100% avalanche tested ? lower leakage ? popular to-247 package power mos v ? downloaded from: http:///
symbol i s i sm v sd t rr q rr dynamic characteristics symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d[cont.] @ 25 c v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25 c r g = 1.6 min typ max 2650 3180 360 500 150 225 110 175 19 30 45 70 10 20 11 22 43 70 71 4 unit pf nc ns apt5028bvr characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time 050-5615 rev b characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d[cont.] ) reverse recovery time (i s = -i d[cont.] , dl s /dt = 100a/ s) reverse recovery charge (i s = -i d[cont.] , dl s /dt = 100a/ s) source-drain diode ratings and characteristics unit amps volts ns c min typ max 2080 1.3 410 6.5 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25 c, l = 4.8mh, r g = 25 , peak i l = 20a 2 pulse test: pulse width < 380 s, duty cycle < 2% apt reserves the right to change, without notice, the specifications and information contained herein. thermal characteristics symbol r jc r ja min typ max 0.50 40 unit c/w characteristicjunction to case junction to ambient z jc , thermal impedance ( c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.50.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature ( c) t j , junction temperature ( c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature ( c) t c , case temperature ( c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 50 100 150 200 250 0 4 8 12 16 02468 01 02 03 04 05 06 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 apt5028bvr i d = 0.5 i d [cont.] v gs = 10v 4030 20 10 0 1.81.6 1.4 1.2 1.0 0.8 1.151.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 4030 20 10 0 4030 20 10 0 2016 12 84 0 2.52.0 1.5 1.0 0.5 0.0 050-5615 rev b v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v t j = -55 c t j = +125 c t j = +25 c t j = -55 c t j = +125 c 5.5v 5v 4.5v 4v v gs =6v, 10v & 15v 6v v gs =15v 5.5v 5v 4.5v 4v v gs =10v normalized to v gs = 10v @ 0.5 i d [cont.] downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 1 5 10 50 100 500 .01 .1 1 10 50 0 50 100 150 200 250 0 0.4 0.8 1.2 1.6 2.0 apt5028bvr t c =+25 c t j =+150 c single pulse 100 5010 51 .5.1 2016 12 84 0 10,000 5,0001,000 500100 200 100 5010 51 0.50.1 050-5615 rev b operation here limited by r ds (on) t j =+150 c t j =+25 c c rss c oss c iss v ds =250v v ds =100v v ds =400v apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 i d = i d [cont.] to-247 package outline 10 s 1ms10ms 100ms dc 100 s downloaded from: http:///
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